A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay
نویسندگان
چکیده
منابع مشابه
Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor
Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...
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In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2008
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/19/32/325201